Observation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs

dc.creatorEdmundo Antonio Gutiérrez Domínguez
dc.creatorERIKA PONDIGO DE LOS ANGELES
dc.creatorVíctor Hugo Vega González
dc.date2012-02
dc.date.accessioned2023-07-25T16:24:53Z
dc.date.available2023-07-25T16:24:53Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2070
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807252
dc.descriptionWe have measured gate current components off the axis perpendicular to the surface. The measured gate oxide magnetoconductance exhibits a pronounced magnetic asymmetry, which indicates that the gate current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By identifying and monitoring the different gate current axis components, we have enhanced the understanding of the physics for Si–oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices.
dc.formatapplication/pdf
dc.languageeng
dc.publisherIEEE Electron Device Letters
dc.relationcitation:Gutiérrez-D., E. A., et al., (2012), Observation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs, IEEE Electron Device Letters, Vol. 33(2): 1–3.
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/Nanoscaled MOSFETs
dc.subjectinfo:eu-repo/classification/Inspec/Quantum magnetoconductance
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleObservation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


Este ítem pertenece a la siguiente institución