dc.creatorHéctor Luis Villacorta Minaya
dc.creatorVíctor Hugo Champac Vilela
dc.date2012-11
dc.date.accessioned2023-07-25T16:24:52Z
dc.date.available2023-07-25T16:24:52Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2060
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807242
dc.descriptionResistive bridges are a major class of defects in nanometer technologies that can escape test, posing a serious reliability risk for CMOS IC circuits. The increase of process parameter variations represents a challenge for resistive bridge detection using traditional test methods, and requires more efficient test methods to be developed. In this work, we show that resistive bridge detection improves by correlating the defect-induced extra circuit delay with the power supply voltage value and the reverse body bias (RBB) applied. A Timing Critical Resistance (Rᵗcrit) is defined as a metric to quantify the resistive bridge detection enhancement in the presence of process variations under a delay based test. We show that the smaller the supply voltage, the higher the resistive bridge detection which further enhances by applying RBB. Results are presented for a 65 nm CMOS technology.
dc.formatapplication/pdf
dc.languageeng
dc.publisherMicroelectronics Reliability
dc.relationcitation:Villacorta, H., et al., (2012), Resistive bridge defect detection enhancement under parameter variations combining Low VDD and body bias in a delay based test, Microelectronics Reliability, Vol. 52(11):2799–2804.
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/Resistive bridges
dc.subjectinfo:eu-repo/classification/Inspec/Nanometer technologie
dc.subjectinfo:eu-repo/classification/Inspec/CMOS technology
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleResistive bridge defect detection enhancement under parameter variations combining Low VDD and body bias in a delay based test
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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