dc.creatorMARIANO ACEVES MIJARES
dc.date2012
dc.date.accessioned2023-07-25T16:24:51Z
dc.date.available2023-07-25T16:24:51Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2056
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807238
dc.descriptionStudies of photo-luminescence (PL) and X-ray Photoelectron Spectroscopy (XPS) were performed to silicon-rich silicon dioxide films (SRO) fabricated by implantation of Si ions on SiO₂ deposited by plasma enhanced chemical vapor deposition (PECVD). Samples presented PL spectra formed by the contribution of two bands, respectively related to defects and quantum confinement (QC). The XPS results for the different samples presented significant differences in the density and types of Si-Si and Si-O bonds. A relation was observed between the types of Si bonds and the PL characteristics presented by the material, obtaining a modulation of the emission spectra trough the change of the implantation dose.
dc.formatapplication/pdf
dc.languageeng
dc.publisherThe Electrochemical Society
dc.relationcitation:González-Fernández, A. A., et al., (2012), Influence of Silicon Binding Energy on Photoluminescence of Si-implanted Silicon Dioxide, The Electrochemical Society, Vol. 49 (1): 307–314.
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/Photo-luminescence
dc.subjectinfo:eu-repo/classification/Inspec/Photoelectron Spectroscopy
dc.subjectinfo:eu-repo/classification/Inspec/Silicon dioxide films
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleInfluence of Silicon Binding Energy on Photoluminescence of Si-implanted Silicon Dioxide
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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