On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

dc.creatorMARIANO ACEVES MIJARES
dc.creatorRoberto Stack Murphy Arteaga
dc.date2012-07
dc.date.accessioned2023-07-25T16:24:51Z
dc.date.available2023-07-25T16:24:51Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2055
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7807237
dc.descriptionSilicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100◦C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.
dc.formatapplication/pdf
dc.languageeng
dc.publisherJournal of Nanomaterials
dc.relationcitation:Aceves-Mijares, M., et al., (2012), On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition, Journal of Nanomaterials, Vol. 2012(5):1-12.
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Inspec/Silicon Rich Oxide
dc.subjectinfo:eu-repo/classification/Inspec/Low-Pressure Chemical
dc.subjectinfo:eu-repo/classification/Inspec/LPCVD
dc.subjectinfo:eu-repo/classification/Inspec/Vapor Deposition
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleOn the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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