| dc.creator | MARIANO ACEVES MIJARES | |
| dc.date | 2012-03 | |
| dc.date.accessioned | 2023-07-25T16:24:51Z | |
| dc.date.available | 2023-07-25T16:24:51Z | |
| dc.identifier | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2053 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7807235 | |
| dc.description | Nowadays, photodetector devices are important components for optoelectronic integration. In the past, various photodetector structures have been developed from pn junction, pin diode, bipolar transistor, avalanche photodiodes (APD), and metal-semiconductor-metal (MSM) structures (Ashkan et al., 2008; Hwang Lin, 2005; DiMaria et al., 1984a, 1984b; Sabnis et al., 2005; Foster et al., 2006). In these structures, different semiconductors such as Si, III-V and II-VI compounds have been used, depending on the wavelength range to be detected. Nevertheless, silicon is the most common and important semiconductor in the integrated circuit technology, but it has an indirect band gap inhibiting optical functions. Silicon sensors are usually used in the visible-to near infrared (VIS-NIR) range. However, some commercial Si sensors have been enhanced to detect in the ultraviolet (UV) range, but they have one or more of the following weaknesses: very expensive, reduced responsivity in the VIS-NIR range, lack of compatibility with IC processes and a complex technology. So, most of the available materials for UV detection are not silicon but compound semiconductors (Hwang Lin, 2005). Then, many works have been done to study Si-based optoelectronics materials to overcome the drawback of silicon. Silicon rich oxide (SRO) is one of such materials. SRO is a variation of silicon oxide, in which the content of silicon is changed. The main characteristic to enhance the UV detection in this material is the formation of silicon nanostructures. Among the different techniques to synthesize Si-nps in SRO films, the low pressure chemical vapour deposition (LPCVD) technique offers the films with the best luminescence properties, compared with those obtained by plasma enhanced CVD and silicon implantation into SiO2 films (Morales et al., 2007). | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | InTech | |
| dc.relation | citation:Luna-López, J. A., et al., (2012), UV-Vis Photodetector with Silicon Nanoparticles, InTech, Photodetectors (pp.33-50 ) Edition: 2012 Chapter: 2. | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
| dc.subject | info:eu-repo/classification/Inspec/Photodetector devices | |
| dc.subject | info:eu-repo/classification/Inspec/Optoelectronic integration | |
| dc.subject | info:eu-repo/classification/Inspec/Integrated circuit technology | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.subject | info:eu-repo/classification/cti/22 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.title | UV-Vis Photodetector with Silicon Nanoparticles | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/acceptedVersion | |
| dc.audience | students | |
| dc.audience | researchers | |
| dc.audience | generalPublic | |
