FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios

dc.creatorAbdu Orduña Díaz
dc.creatorCARLOS GERARDO TREVIÑO PALACIOS
dc.creatorMARLON ROJAS LOPEZ
dc.creatorRAUL JACOBO DELGADO MACUIL
dc.creatorVALENTIN LOPEZ GAYOU
dc.creatorALFONSO TORRES JACOME
dc.date2010
dc.date.accessioned2023-07-25T16:24:18Z
dc.date.available2023-07-25T16:24:18Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1773
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806965
dc.descriptionHydrogenated amorphous silicon (a-Si:H) has found applications in flat panel displays, photovoltaic solar cell and recently has been employed in boron doped microbolometer array.Wehave performed electrical and structural characterizations of a-Si:H layers prepared by plasma enhanced chemical vapor deposition (PECVD) method at 540K on glass substrates at different diborane (B2H6) flow ratios (500, 250, 150 and 50 sccm). Fourier transform infrared spectroscopy (FTIR) measurements obtained by specular reflectance sampling mode, show Si–Si, B–O, Si–H, and Si–O vibrational modes (611, 1300, 2100 and 1100cm−1 respectively) with different strengths which are associated to hydrogen and boron content. The current–voltage curves show that at 250 sccm flow of boron the material shows the lowest resistivity, but for the 150 sccm boron flow it is obtained the highest temperature coefficient of resistance (TCR).
dc.formatapplication/pdf
dc.languageeng
dc.publisherElsevier B.V.
dc.relationcitation:Orduña-Diaz, A., et al., (2010). FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios, Materials Science and Engineering B ,(174): 93–96
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Hydrogenated amorphous silicon/Hydrogenated amorphous silicon
dc.subjectinfo:eu-repo/classification/Vibrational modes/Vibrational modes
dc.subjectinfo:eu-repo/classification/PECVD/PECVD
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleFTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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