Device application of non-equilibrium MOS capacitors fabricated on high resistivity silicon

dc.creatorOLEKSANDR MALIK
dc.creatorFRANCISCO JAVIER DE LA HIDALGA WADE
dc.date2011
dc.date.accessioned2023-07-25T16:24:12Z
dc.date.available2023-07-25T16:24:12Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1719
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806911
dc.descriptionThis work shows that the direct pulse-wide-modulated (PWM) output electric signal, with a duty cycle controlled by light intensity, can be obtained using a circuit that contains a saw-tooth voltage generator connected in series with a dc voltage source and a metal (semitransparent gate) oxide semiconductor capacitor (MOS-C) operating in non-equilibrium mode. Amplified output signal presents positive and negative PWM waveforms that can be easily separated using diodes. The duty of the positive part is proportional to the light intensity, whereas for the negative part is inversely proportional to the intensity. The frequency operating range of this proposed instrument varies from 1 Hz to a few kilohertz. The duty cycle of the PWM output signal varies from 2 to 98 % when the incident light intensity is varying in the microwatts range. This new transducer could be useful for automatic control, robotic applications, dimmer systems feedback electronic systems, and non-contact optical position sensing for nulling and centering measurements. The detailed description of the physical and operating principles of this invented transducer are presented.
dc.formatapplication/pdf
dc.languageeng
dc.publisher International Journal on Smart Sensing and Intelligent Systems
dc.relationcitation:O. Malik, F. J. & De la Hidalga-W. (2011). Device application of non-equilibrium MOS capacitors fabricated on high resistivity silicon, Vol. 4(4):686-697
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/MOS-capacitor/MOS-capacitor
dc.subjectinfo:eu-repo/classification/Silicon/Silicon
dc.subjectinfo:eu-repo/classification/Pulse-width modulation/Pulse-width modulation
dc.subjectinfo:eu-repo/classification/Nulling and centering measurements/Nulling and centering measurements
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleDevice application of non-equilibrium MOS capacitors fabricated on high resistivity silicon
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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