dc.creatorENRIQUE QUIROGA GONZALEZ
dc.creatorMARIANO ACEVES MIJARES
dc.creatorZHENRUI YU
dc.creatorROSA ELVIA LOPEZ ESTOPIER
dc.creatorKARIM MONFIL LEYVA
dc.date2011
dc.date.accessioned2023-07-25T16:24:08Z
dc.date.available2023-07-25T16:24:08Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1685
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806877
dc.descriptionThe photoluminescence emission of multilayer structures composed of layers of silicon rich oxide with high silicon content and layers of silicon rich oxide with low silicon content obtained by low pressure chemical vapor deposition is here presented. Different parameters for the preparation of the multilayers have been varied such as the Si concentration and the thicknesses of the layers. Additionally, the samples were oxidized at different temperatures. For all samples the photoluminescence seems to have the same origin: defects in the oxide matrix and defects at the interfaces between the Si nanocrystals. The structural and compositional properties of the multilayer structures are discussed.
dc.formatapplication/pdf
dc.languageeng
dc.publisherElsevier B.V.
dc.relationcitation:Quiroga-González, E., et al., (2011). On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition, Thin Solid Films, (519): 8030–8036
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Multilayers/Multilayers
dc.subjectinfo:eu-repo/classification/Silicon rich oxide/Silicon rich oxide
dc.subjectinfo:eu-repo/classification/Nanoparticles/Nanoparticles
dc.subjectinfo:eu-repo/classification/Photoluminescence/Photoluminescence
dc.subjectinfo:eu-repo/classification/Low-pressure chemical vapor deposition/Low-pressure chemical vapor deposition
dc.subjectinfo:eu-repo/classification/Transmission electron microscopy/Transmission electron microscopy
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleOn the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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