Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition

dc.creatorROSA ELVIA LOPEZ ESTOPIER
dc.creatorMARIANO ACEVES MIJARES
dc.creatorZHENRUI YU
dc.creatorCIRO FALCONY GUAJARDO
dc.date2011
dc.date.accessioned2023-07-25T16:24:08Z
dc.date.available2023-07-25T16:24:08Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1684
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806876
dc.descriptionRoom temperature cathodoluminescence and photoluminescence were used to study silicon rich oxide (SRO) films with 5.5% silicon excess. Intense blue and red luminescence emissions were found. A SRO film was deposited by low-pressure chemical vapor deposition and was annealed at 1100 °C by 3 h in a nitrogen ambient. The emission from the SRO films was modeled as being due to donor-acceptor-pair decay. Calculations have been made to obtain the first estimates of the donor and acceptor energy distributions in SRO films.
dc.formatapplication/pdf
dc.languageeng
dc.publisherAmerican Vacuum Society
dc.relationcitation:López-Estopier, R., et al., (2011). Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition, Journal of Vacuum Science & Technology B, Vol. 29 (2, 21017): 1-5
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleDetermination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


Este ítem pertenece a la siguiente institución