dc.creatorCARLOS ZUÑIGA ISLAS
dc.creatorANDREY KOSAREV
dc.creatorALFONSO TORRES JACOME
dc.creatorPEDRO ROSALES QUINTERO
dc.creatorWILFRIDO CALLEJA ARRIAGA
dc.creatorFRANCISCO JAVIER DE LA HIDALGA WADE
dc.creatorOLEKSANDR MALIK
dc.date2010
dc.date.accessioned2023-07-25T16:23:49Z
dc.date.available2023-07-25T16:23:49Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1524
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806719
dc.descriptionThe fabrication and electrical characterization of Metal- Insulator-Metal (MIM) structures, using a-C:H films as the insulating material, are presented in this work. These PECVD carbon films show a very low dielectric constant and a very high resistivity. The current conduction mechanisms were analyzed before and after the post deposition annealing in pure argon ambient at 400°C. For as-deposited films, the experimental J-U curves showed that under low biasing regime (|U| < 8 V) the space charge limited current conduction is the main transport mechanism, whereas under higher biasing regime (|U| > 8 V)) the current transport is dominated by the Schottky mechanism. For annealed structures, under low and high biasing the ohmic and Schottky mechanisms were identified as the main processes for the electrical transport. Finally, we found that both parameters, the dielectric constant and resistivity, decrease slightly after the thermal annealing.
dc.formatapplication/pdf
dc.languageeng
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.relationcitation:Zúñiga-Islas, C., et al., (2010). Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures, Physica Status Solidi C, Vol. 7, (3–4): 808–811
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleElectrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


Este ítem pertenece a la siguiente institución