Magneto-modulation of gate leakage current in 65 nm nMOS transistors: Experimental, modeling, and simulation results

dc.creatorEDMUNDO ANTONIO GUTIERREZ DOMINGUEZ
dc.creatorJOEL MOLINA REYES
dc.creatorPEDRO JAVIER GARCIA RAMIREZ
dc.date2010
dc.date.accessioned2023-07-25T16:23:44Z
dc.date.available2023-07-25T16:23:44Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1478
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806673
dc.descriptionWe introduce experimental results that reveal a small static and a slowly varying-dynamic magnetic field B induces a magneto-modulation of the gate leakage current of a 65 nm nMOSFET. For the case of a 100 mT (mili-Tesla) static B field a variation of the 6% (1.5 nA/27 nA) of the gate current is observed. For a 5 Hz slowly varying (±100 mT) square pulsed magnetic field, the gate current dynamic variation raises up to 18% (4.8 nA/27 nA). These experimental observations are explained in terms of space and time modulation of the two-dimensional surface inversion layer charge. The static B field dependent model is validated through Minimos-NT numerical simulations, while the dynamic B field experimental observations are reproduced with a SPICE macro-model, which uses the static device model as initial condition for the dynamic model. With this model we are able to predict the impact of small static and dynamic B fields on the gate leakage current and channel current interference of low-dimensional MOS transistors. We also propose this electro-magnetic experimental technique as an alternative for detailed exploration of the Si–SiO2 interface properties for 2 nm or thinner gate oxides, as well as for low-dimensional semiconductor devices.
dc.formatapplication/pdf
dc.languageeng
dc.publisherElsevier Ltd.
dc.relationcitation:Gutierrez-D, E.A., et al., (2010). Magneto-modulation of gate leakage current in 65 nm nMOS transistors: Experimental, modeling, and simulation results, Solid-State Electronics, (54): 1022–1026
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/65 nm MOSFET/65 nm MOSFET
dc.subjectinfo:eu-repo/classification/Gate leakage/Gate leakage
dc.subjectinfo:eu-repo/classification/Magnetic field/Magnetic field
dc.subjectinfo:eu-repo/classification/Em interference/Em interference
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleMagneto-modulation of gate leakage current in 65 nm nMOS transistors: Experimental, modeling, and simulation results
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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