| dc.creator | GERARD FRANZ SANTILLAN QUIÑONEZ | |
| dc.creator | VICTOR HUGO CHAMPAC VILELA | |
| dc.creator | ROBERTO STACK MURPHY ARTEAGA | |
| dc.date | 2010 | |
| dc.date.accessioned | 2023-07-25T16:23:43Z | |
| dc.date.available | 2023-07-25T16:23:43Z | |
| dc.identifier | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1469 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7806664 | |
| dc.description | The magnetic sensing capabilities of Split-Drain MAGFETs (SD-MAGFETs) with a channel that is a short Hall plate, herein called Short Split-Drain MAGFETs, are analyzed. In addition to the current-lines deflection effect, this paper shows that the magnetoresistance effect also contributes to establish the sensitivity of Short SD-MAGFETs. A relationship between the forces acting on the deflection direction and a model of the Hall angle are developed showing that these effects are favored notoriously when L/W ⩽ 0.27. Furthermore, the magnetoresistance effect improves the sensitivity when the channel length is reduced. This allows to design a high-sensitivity SD-MAGFET with a reduced active area. Using the proposed model of the Hall angle with a continuous model of the geometric correction factor, a continuous variation of the Hall angle along the channel for any L/W can be obtained, and a quantitative criterion to establish which range of the L/W values corresponds to a short Hall plate and which one to a long Hall plate can be established. In order to validate the proposed design criteria, a Short SD-MAGFET with L/W = 0.2 and W/L = 10 μm/2 μm has been characterized. Sensing capabilities from 90 μT to 27 μT and sensitivities from 15.51% to 59.9% have been experimentally obtained at room temperature and in strong inversion. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | Elsevier Ltd. | |
| dc.relation | citation:Santillan-Quiñonez, G.F., et al., (2010). Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs, Solid-State Electronics, (54): 1239–1245 | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
| dc.subject | info:eu-repo/classification/MAGFET/MAGFET | |
| dc.subject | info:eu-repo/classification/Split-Drain MAGFET/Split-Drain MAGFET | |
| dc.subject | info:eu-repo/classification/Hall effect/Hall effect | |
| dc.subject | info:eu-repo/classification/Magnetic sensor/Magnetic sensor | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.subject | info:eu-repo/classification/cti/22 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.title | Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/acceptedVersion | |
| dc.audience | students | |
| dc.audience | researchers | |
| dc.audience | generalPublic | |
