dc.creatorALONSO CORONA CHAVEZ
dc.creatorJOSE LUIS OLVERA CERVANTES
dc.date2010
dc.date.accessioned2023-07-25T16:23:42Z
dc.date.available2023-07-25T16:23:42Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1462
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806658
dc.descriptionA novel compact Epsilon Near Zero (ENZ) tunneling circuit with microstrip coupling for high integrability applications is presented. Full design procedure, simulation and experimental results are shown, and a methodology to extract the e®ective permittivity and propagation constants in the tunnel is described. Detailed analysis of the dependence on external quality factor and tunnel to feed height ratio is investigated. Simulation and measurement results of the ENZ tunnel structure are in good agreement.
dc.formatapplication/pdf
dc.languageeng
dc.publisherProgress In Electromagnetics Research C
dc.relationcitation:D. V. B. Murthy, et al., (2010). A novel Epsilon Near Zero (ENZ) tunneling circuit using microstrip technology for high integrability applications, Progress In Electromagnetics Research C, (15): 65-74
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleA novel Epsilon Near Zero (ENZ) tunneling circuit using microstrip technology for high integrability applications
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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