dc.creatorALFREDO MORALES SANCHEZ
dc.creatorMARIANO ACEVES MIJARES
dc.creatorJORGE MIGUEL PEDRAZA CHAVEZ
dc.date2010
dc.date.accessioned2023-07-25T16:23:40Z
dc.date.available2023-07-25T16:23:40Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1444
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806640
dc.descriptionPhotoluminescence (PL) properties of thin and thick silicon-rich oxide (SRO) and silicon implanted SRO (SI-SRO) films with different silicon excess fabricated by low pressure chemical vapor deposition (LPCVD) were studied. The effects of the annealing temperature and silicon implantation on the PL were also studied. Maximum luminescence intensity was observed with an annealing temperature of 1150 and 1100 ◦C for thin and thick SRO films, respectively. The PL intensity is strongly enhanced when SRO films are implanted with silicon, especially for thin SRO films. Thin SI-SRO films emit up to six times more than non-implanted films, meanwhile the PL in thick SI-SRO films is only improved less than two times. Therefore, thin SI-SRO films are an interesting alternative for applications such as the fabrication of efficient Si-nps based LEDs.
dc.formatapplication/pdf
dc.languageeng
dc.publisherElsevier B.V.
dc.relationcitation:Morales-Sánchez, A., et al., (2010). Photoluminescence enhancement through silicon implantation on SRO-LPCVD films, Materials Science and Engineering B (174): 119–122
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Silicon-rich oxide/Silicon-rich oxide
dc.subjectinfo:eu-repo/classification/Silicon-nanoparticles/Silicon-nanoparticles
dc.subjectinfo:eu-repo/classification/Photoluminescence/Photoluminescence
dc.subjectinfo:eu-repo/classification/Silicon implanted SRO/Silicon implanted SRO
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titlePhotoluminescence enhancement through silicon implantation on SRO-LPCVD films
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


Este ítem pertenece a la siguiente institución