DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

dc.creatorALFREDO MORALES SANCHEZ
dc.creatorMARIANO ACEVES MIJARES
dc.date2010
dc.date.accessioned2023-07-25T16:23:37Z
dc.date.available2023-07-25T16:23:37Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1417
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806613
dc.descriptionElectroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 ◦C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths—across the SRO film— has been proposed to explain the EL behaviour in these devices.
dc.formatapplication/pdf
dc.languageeng
dc.publisherIOP Publishing Ltd
dc.relationcitation:Morales-Sánchez, A., et al., (2010). DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films, Nanotechnology, Vol. 21 (085710): 1-5
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleDC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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