México
| info:eu-repo/semantics/article
Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides
| dc.creator | JOEL MOLINA REYES | |
| dc.creator | FRANCISCO JAVIER DE LA HIDALGA WADE | |
| dc.creator | PEDRO ROSALES QUINTERO | |
| dc.date | 2008 | |
| dc.date.accessioned | 2023-07-25T16:23:19Z | |
| dc.date.available | 2023-07-25T16:23:19Z | |
| dc.identifier | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1267 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7806464 | |
| dc.description | In this paper, we report and compare the reliability results obtained for W-La 2 O 3 gated Metal-Oxide-Semiconductor (MOS) devices with those of HfO 2-based systems reported in literature. Reliability issues like stress-induced leakage current (SILC), interface-states generation (Dit), threshold voltage shift (ΔVth) and time to breakdown (t bd) were compared and analyzed for both dielectrics in order to obtain a more specific assessment of their resistance to electrical degradation and breakdown. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | IEEE | |
| dc.relation | citation:J. Molina, et al., (2008). Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides, IEEE (978-1-4244-2540-2/08): 1-4 | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.subject | info:eu-repo/classification/cti/22 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.title | Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/acceptedVersion | |
| dc.audience | students | |
| dc.audience | researchers | |
| dc.audience | generalPublic |