dc.creatorZHENRUI YU
dc.creatorMARIANO ACEVES MIJARES
dc.date2009
dc.date.accessioned2023-07-25T16:23:14Z
dc.date.available2023-07-25T16:23:14Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1222
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806419
dc.descriptionSingle layer films and a multilayer structure of SRO (Silicon Rich Oxide) have been prepared by LPCVD (Low Pressure Chemical Vapour Deposition) and characterized by FTIR, SIMS, XPS, TEM and AFM measurements. The stacked structure is composed of alternating layers of SRO with high Si content and SRO with low Si content. The layered structure is confirmed by SIMS and TEM measurements. The composition of the materials is discussed. Besides Si nanocrystals, the existence of agglomerates of silicon oxide with structure close to fused silica and the existence of oxynitrides is evidenced in the films with high Si content.
dc.formatapplication/pdf
dc.languageeng
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.relationcitation:Quiroga, E., et al., (2009). Structural characteristics of a multilayer of silicon rich oxide (SRO) with high Si content prepared by LPCVD, Physica Status Solidi, A 206 (2): 263–269
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleStructural characteristics of a multilayer of silicon rich oxide (SRO) with high Si content prepared by LPCVD
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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