| dc.creator | ALFONSO TORRES JACOME | |
| dc.creator | MARIO MORENO MORENO | |
| dc.creator | ANDREY KOSAREV | |
| dc.creator | AURELIO HORACIO HEREDIA JIMENEZ | |
| dc.date | 2008 | |
| dc.date.accessioned | 2023-07-25T16:22:59Z | |
| dc.date.available | 2023-07-25T16:22:59Z | |
| dc.identifier | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1101 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7806300 | |
| dc.description | In this work we report a study of silicon–germanium–boron alloys (a-SixGeyBz:H) deposited by low frequency plasma enhanced chemical vapor deposition (LF PECVD) at relatively low temperatures, which are compatible with the IC silicon technology for applications as low resistance thermo-sensing films in micro-bolometers. Three values of germanium gas content (Gey) were used during the film deposition, Gey = 0.3, 0.45 and 0.55. Deposition and film properties were compared with a reference intrinsic film (a-SixGey:H) in order to study the Gey effect on the temperature dependence of conductivity (δ(T)) and specifically on the activation energy (Ea). We observed a variation on the activation energy from Ea = 0.34 eV to Ea = 0.18 eV and on the room temperature conductivity from δ RT = 6 X 10-5 (Ω cm)-1 to δ RT = 2.5 X 10-2 (Ω cm)-1, for the reference intrinsic film and for the boron alloy with Gey = 0.55, respectively. The solid phase composition of the films was characterized by SIMS measurements. The effect of patterning the films (µ m scale) with photolithography and the deposition on a SiNx micro-bridge on the film electrical properties was also studied. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | Elsevier B.V. | |
| dc.relation | citation:Torres-Jacome, A., et al., (2008). Thermo-sensing silicon–germanium–boron films prepared by plasma for un-cooled micro-bolometers, Journal of Non-Crystalline Solids (354): 2556–2560 | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
| dc.subject | info:eu-repo/classification/Amorphous semiconductors/Amorphous semiconductors | |
| dc.subject | info:eu-repo/classification/Germanium/Germanium | |
| dc.subject | info:eu-repo/classification/Silicon/Silicon | |
| dc.subject | info:eu-repo/classification/Conductivity/Conductivity | |
| dc.subject | info:eu-repo/classification/Plasma deposition/Plasma deposition | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.subject | info:eu-repo/classification/cti/22 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.title | Thermo-sensing silicon–germanium–boron films prepared by plasma for un-cooled micro-bolometers | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/acceptedVersion | |
| dc.audience | students | |
| dc.audience | researchers | |
| dc.audience | generalPublic | |
