Degradation and Breakdown of W–La2O3 Stack after Annealing in N2

dc.creatorJOEL MOLINA REYES
dc.creatorALFONSO TORRES JACOME
dc.creatorWILFRIDO CALLEJA ARRIAGA
dc.date2008
dc.date.accessioned2023-07-25T16:22:58Z
dc.date.available2023-07-25T16:22:58Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1098
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806297
dc.descriptionWe report the effect of relatively high-voltage stressing (under substrate injection) on the stress-induced leakage current (SILC) and breakdown of W–La2O3 stacked structures. It is shown that the gate area of the metal–insulator–semiconductor (MIS) devices under evaluation influences their final degradation characteristics after stress. Once the samples reach breakdown, their post-breakdown current–voltage (I–V) characteristics suggest that leakage spots are highly localized and are caused by the accumulation of defects.
dc.formatapplication/pdf
dc.languageeng
dc.publisherThe Japan Society of Applied Physics
dc.relationcitation:Molina-Reyes, J. , et al., (2008). Degradation and Breakdown of W–La2O3 Stack after Annealing in N2, Japanese Journal of Applied Physics, Vol. 47 (9): 7076–7080
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/PMA/PMA
dc.subjectinfo:eu-repo/classification/SILC/SILC
dc.subjectinfo:eu-repo/classification/Breakdown/Breakdown
dc.subjectinfo:eu-repo/classification/Reliability/Reliability
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleDegradation and Breakdown of W–La2O3 Stack after Annealing in N2
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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