Pulse characteristics of silicon double barrier optical sensors with signal amplification

dc.creatorOLEKSANDR MALIK
dc.creatorFRANCISCO JAVIER DE LA HIDALGA WADE
dc.creatorCARLOS ZUÑIGA ISLAS
dc.date2008
dc.date.accessioned2023-07-25T16:22:58Z
dc.date.available2023-07-25T16:22:58Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1097
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806296
dc.descriptionThe pulse characteristics of optical sensors with double potential barriers formed on the opposite sides of a high-resistivity (v) silicon substrate have been studied. The first barrier is formed by multiple micro-sized Ti–vSi contact barriers surrounded by Ti–SiO2–vSi MOS structures. The second one is the v–n+ potential barrier formed at the bottom of the wafer. The structure presents signal amplification for both polarities of the applied voltage. Under negative bias applied to the semi-transparent Ti-electrode, the reason of the current gain is the change in the transport mechanism of carriers through the potential barrier of the Schottky barrier along its perimeter, which is due to the strong electric field originated by the photogenerated minority carriers forming an inversion layer at the silicon-oxide interface. Under positive bias, the current gain is due to the operation of the v–n+ potential barrier, which was studied earlier, and in this work it is used for comparison purposes.
dc.formatapplication/pdf
dc.languageeng
dc.publisherElsevier B.V.
dc.relationcitation:Malik, O., et al., (2008). Pulse characteristics of silicon double barrier optical sensors with signal amplification, Sensors and Actuators A (142): 118–123
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Optical sensors/Optical sensors
dc.subjectinfo:eu-repo/classification/Silicon/Silicon
dc.subjectinfo:eu-repo/classification/Signal amplification/Signal amplification
dc.subjectinfo:eu-repo/classification/Double barrier structures/Double barrier structures
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titlePulse characteristics of silicon double barrier optical sensors with signal amplification
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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