Comparison of three un-cooled micro-bolometers configurations based on amorphous silicon–germanium thin films deposited by plasma

dc.creatorMARIO MORENO MORENO
dc.creatorANDREY KOSAREV
dc.creatorALFONSO TORRES JACOME
dc.creatorROBERO CARLOS AMBROSIO LAZARO
dc.date2008
dc.date.accessioned2023-07-25T16:22:57Z
dc.date.available2023-07-25T16:22:57Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1092
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7806290
dc.descriptionWe present a comparative study of three configurations of un-cooled micro-bolometers based on amorphous silicon–germanium thin films deposited by plasma at low temperature and compatible with the IC technology. The temperature dependence of conductivity δ(T), current–voltage characteristics I(U) and current noise spectral density (NSD) have been measured in order to characterize and compare the performance characteristics, such as responsivity and detectivity in three configurations of micro-bolometers: (a) planar structure with a silicon–germanium intrinsic (a-SixGey:H) thermo-sensing film; (b) planar structure with a silicon–germanium–boron alloy (a-Six-GeyBz:H) thermo-sensing film and (c) sandwich structure with an intrinsic (a-SixGey:H) thermo-sensing film. The samples studied demonstrated different cell resistance Rc = 105–108 X and responsivities R1 = 101–10-3 A/W, while the values of detectivity D* were quite similar D* = (4–7) X 109 cm Hz1/2 W-1.
dc.formatapplication/pdf
dc.languageeng
dc.publisherElsevier B.V.
dc.relationcitation:Moreno-Moreno, M. , et al., (2008). Comparison of three un-cooled micro-bolometers configurations based on amorphous silicon–germanium thin films deposited by plasma, Journal of Non-Crystalline Solids (354): 2598–2602
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Amorphous semiconductors/Amorphous semiconductors
dc.subjectinfo:eu-repo/classification/Germanium/Germanium
dc.subjectinfo:eu-repo/classification/Silicon/Silicon
dc.subjectinfo:eu-repo/classification/Sensors/Sensors
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleComparison of three un-cooled micro-bolometers configurations based on amorphous silicon–germanium thin films deposited by plasma
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


Este ítem pertenece a la siguiente institución