| dc.creator | ANA LUZ MUÑOZ ZURITA | |
| dc.creator | Joaquin Campos_Acosta | |
| dc.creator | ALEXANDER SHCHERBAKOV | |
| dc.creator | Alicia Pons | |
| dc.date | 2008 | |
| dc.date.accessioned | 2023-07-25T16:22:42Z | |
| dc.date.available | 2023-07-25T16:22:42Z | |
| dc.identifier | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/950 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7806146 | |
| dc.description | At the present time, silicon and InGaAs/InP photodetectors from different manufactures have rather low level of noise, a
good uniformity of the surface response as well as a wide dynamic range and linearity. For these reasons they are
exploited in the instruments for measuring optical radiation within the near infrared range 800-1600 nm. Furthermore, the
silicon and InGaAs/InP photodetectors are used for maintaining the scales of spectral responsitivity in the above-listed
spectral range in many laboratories. Due to the last application, we presented our studies of the reflectance and the
internal quantum efficiency inherent in silicon and InGaAs/InP photodiodes from different manufactures.
Both the reflectance and the internal quantum efficiency determine the photodiode spectral responsivity, which is the
radiometric characteristic of interest in the fields where these devices can be used for optical radiation measurements.
The responsivity will be known if both the reflectance and the internal quantum efficiency are known at every
wavelength We have measured the reflectance of three silicon photodiodes and three InGaAs/InP photodiodes that were
practically used to maintain scale of the spectral responsivity in the Institute for Applied Physics (CSIC). The results
obtained show that we have an outstanding change between the reflectance of the photodiodes of the same set, which
indicates that its necessary to measure the reflectance of every individual photodiode if an accurate reflectance
knowledge is needed, its necessary to measure the reflectance of every individual photodiode to have a precise
knowledge on the evolution of its reflectance. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | SPIE Digital Library | |
| dc.relation | citation:Muñoz-Zurita, A.L., et al., (2007). Measuring the reflectance and the internal quantum efficiency of silicon and InGaAs/InP photodiodes in near infrared range, Proc. of SPIE, Vol. 6890 (68900P): 1-8 | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
| dc.subject | info:eu-repo/classification/Reflectance/Reflectance | |
| dc.subject | info:eu-repo/classification/Near infrared range/Near infrared range | |
| dc.subject | info:eu-repo/classification/Photodiodes/Photodiodes | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.subject | info:eu-repo/classification/cti/22 | |
| dc.subject | info:eu-repo/classification/cti/2209 | |
| dc.subject | info:eu-repo/classification/cti/2209 | |
| dc.title | Measuring the reflectance and the internal quantum efficiency of silicon and InGaAs/InP photodiodes in near infrared range | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/acceptedVersion | |
| dc.audience | students | |
| dc.audience | researchers | |
| dc.audience | generalPublic | |
