| dc.contributor | ANDREY KOSAREV | |
| dc.contributor | ALFONSO TORRES JACOME | |
| dc.creator | ISMAEL COSME BOLAÑOS | |
| dc.date | 2013-01 | |
| dc.date.accessioned | 2023-07-25T16:21:13Z | |
| dc.date.available | 2023-07-25T16:21:13Z | |
| dc.identifier | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/258 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7805478 | |
| dc.description | The Silicon-based alloys deposited by Enhanced Plasma Chemical Vapor
Deposition (PECVD) are of much interest to large area applications and comercial mass
production.
Germanium is currently the most interesting low-optical gap material that can
provide many potential advantages to silicon-based technologies. For example, the
hydrogenated silicon-germanium (SiGe:H) alloys are used in multiple-junction devices due
to their potentially higher conversion efficiency than only silicon-based devices. The
narrow optical gap of these alloys and compatibility with silicon films deposited by plasma
are the main advantages. The silicon-germanium alloys with relative low-optical gap
(Eg=1.5 eV) for Ge content less than 40% are commonly used in multiple-junction
amorphous solar cells, although a lower optical gap (Eg~1.2 eV) for high Ge content
(>50%) is highly wishful. Morehover the low optical gap and the high absorption
coefficient in the wavelength 1500nm make the germanium-based alloys an interesting
material for near infrared applications (micro-bolometers). Another potential advantage
with the uses of Ge materials is the higher hole (four times) and electron (two times)
mobility rather than Si materials.
The versatility of PECVD process allows relative low deposition temperatures
Td<300°C in comparison to the thermal deposition techniques. This versatilityis of much
interest for the industry and scienties because of the energy reduction of the deposition
process, and recently, the compatibility with potential applications in flexible devices on
low-cost plastic substrates. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | Instituto Nacional de Astrofísica, Óptica y Electrónica | |
| dc.relation | citation:Cosme-Bolaños I. | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
| dc.subject | info:eu-repo/classification/Semiconductores amorfos/Amorphous semiconductors | |
| dc.subject | info:eu-repo/classification/Plasma CVD/Plasma CVD | |
| dc.subject | info:eu-repo/classification/Aleaciones de germanio/Germanium alloys | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.subject | info:eu-repo/classification/cti/22 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.title | Study of GeSi:H materials deposited by PECVD at low temperatures (Td<200 °C) for device applications | |
| dc.type | info:eu-repo/semantics/doctoralThesis | |
| dc.type | info:eu-repo/semantics/acceptedVersion | |
| dc.audience | students | |
| dc.audience | researchers | |
| dc.audience | generalPublic | |
