| dc.contributor | ROBERTO STACK MURPHY ARTEAGA | |
| dc.contributor | REYDEZEL TORRES TORRES | |
| dc.creator | GERMAN ANDRES ALVAREZ BOTERO | |
| dc.date | 2013-08 | |
| dc.date.accessioned | 2023-07-25T16:21:08Z | |
| dc.date.available | 2023-07-25T16:21:08Z | |
| dc.identifier | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/220 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7805441 | |
| dc.description | Due to the growing interest for using devices fabricated in BiCMOS technologies
for microwave applications, the development of reliable models that
represent the performance of heterojunction bipolar transistor (HBT) in high
frequencies, is increasingly necessary in the design of integrated circuits. To
contribute in this research area, this dissertation focuses on the development
of models for high-frequency simulation both compact and equivalent circuit.
These models allow not only to deepen the understanding of the physical
phenomena emerging in advanced bipolar technologies, but also represent
an important contribution to the evolution of the design assisted by circuit
simulators, and the development of new microwave applications.
This dissertation is presented in a sequential way, from the study of the
origin and physical interpretation of the losses associated with the required
test structures for the measurement of small-signal parameters of HBTs.
The resulting model that includes the parasitic effects introduced by the
test structure shows that considering the effects emerging at high frequencies,
such as the skin effect, a significant improvement is obtained in the
de-embedding procedures. Thus, the development of this dissertation has
contributed in improving the quality of de-embedding procedures, which directly
affect the reliability of the measurement, characterization and modeling
of BiCMOS devices.
Subsequently, the effects associated with the distributed nature of the
HBTs were carefully analyzed, allowing the development of a hybrid model,
i.e., a model resulting by combining equivalent circuit model and a compact
model. The model proposed in this dissertation, together with its corresponding parameter extraction methodology, allow to deepen in the understanding
of the distributed effects that impact the electrical characteristics
of an HBT’s input and output. The results show an excellent simulationexperiment
correlation up to 60 GHz, extending the frequency limits of current
models used for the design of multi-stage ICs.
From the resulting hybrid models, once optimized, mentioned above, the
impact on the power gain by not considering the appropriate characteristics
of input and output is analyzed in this dissertation. This study was
conducted for both common-emitter configuration as for common-base configuration. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | Instituto Nacional de Astrofísica, Óptica y Electrónica | |
| dc.relation | citation:Alvarez-Botero G.A. | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
| dc.subject | info:eu-repo/classification/Transistores bipolares de Heterojunction/Heterojunction bipolar transistors | |
| dc.subject | info:eu-repo/classification/S-parameters/S-parameters | |
| dc.subject | info:eu-repo/classification/Modelado de dispositivos/Device modeling | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.subject | info:eu-repo/classification/cti/22 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.title | Development of methodologies for characterization and modeling of devices for high frequency applications from small-signal S-parameters | |
| dc.type | info:eu-repo/semantics/doctoralThesis | |
| dc.type | info:eu-repo/semantics/acceptedVersion | |
| dc.audience | students | |
| dc.audience | researchers | |
| dc.audience | generalPublic | |
