Optoelectronic properties of tin doped indium oxide films fabricated by DC magnetron sputtering with post annealing in oxygen atmosphere

dc.contributorOLEKSANDR MALIK
dc.contributorFRANCISCO JAVIER DE LA HIDALGA WADE
dc.creatorCRISTIAN JAVIER HERRERA RODRIGUEZ
dc.date2014-02
dc.date.accessioned2023-07-25T16:21:06Z
dc.date.available2023-07-25T16:21:06Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/203
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7805424
dc.descriptionIndium Tin Oxide (ITO) films are highly transparent in the visible region, exhibiting high reflectance in the infrared region, and presenting nearly metallic conductivity. Owing to this unusual combination of electrical and optical properties, this material is widely applied in optoelectronic devices. In this study, ITO films were deposited on Corning Glass substrates by DC magnetron sputtering technique at 100 watts using an ITO ceramic target (In2O3:SnO2, 90:10 wt%) in argon atmosphere at room temperature, and a posterior annealing at different temperatures in oxygen-rich atmosphere. The electrical, optical and microstructural properties of ITO films, as a function of the post-annealing temperature were analyzed by XRD, spectral, Hall Effect and AFM measurements. It has been found that as-deposited the amorphous ITO films transform to a polycrystalline structure at temperatures above 200oC. At the same time, the resistivity decreases and the visible optical transmittance increases. The best electro-optical parameters of the ITO films have been obtained by annealing at 300oC in pure oxygen environment. This temperature allows for the fabrication of high quality ITO films on flexible polymer substrates Kapton from DuPont. The use of other flexible substrates, such as Teflon, which are important for thin film photoelectric applications, is connected with the desire of decreasing the annealing temperature below 200oC; a possible solution to achieve this goal is discussed as a future work.
dc.formatapplication/pdf
dc.languageeng
dc.publisherInstituto Nacional de Astrofísica, Óptica y Electrónica
dc.relationcitation:Herrera-Rodriguez C.J.
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Función del trabajo/Work function
dc.subjectinfo:eu-repo/classification/Transparencia/Transparency
dc.subjectinfo:eu-repo/classification/Óptica/Optics
dc.subjectinfo:eu-repo/classification/Propiedades electricas/Electrical properties
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleOptoelectronic properties of tin doped indium oxide films fabricated by DC magnetron sputtering with post annealing in oxygen atmosphere
dc.typeinfo:eu-repo/semantics/masterThesis
dc.typeinfo:eu-repo/semantics/acceptedVersion
dc.audiencestudents
dc.audienceresearchers
dc.audiencegeneralPublic


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