| dc.contributor | EDMUNDO ANTONIO GUTIERREZ DOMINGUEZ | |
| dc.creator | OSCAR VICENTE HUERTA GONZALEZ | |
| dc.date | 2014-02 | |
| dc.date.accessioned | 2023-07-25T16:21:04Z | |
| dc.date.available | 2023-07-25T16:21:04Z | |
| dc.identifier | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/183 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7805405 | |
| dc.description | Typically, when the inversion channel has formed in a nMOSFET and
the drain voltage is swept, the channel current is positive, meaning a sourceto-
drain electron flow. This can be observed in transistors with channel
lengths not longer than 80 nm.
A set of experimental results showing a reversible channel current effect in a
34 nm nMOSFET is introduced. This effect means that the electrons suffer a
change in the direction, now flowing from drain-to-source. By numerical
modeling it was found that the reversible channel current effect is understood
by incorporating the Density Gradient (DG) theory, which is considered an
enhanced drift-diffusion model. The enhancement comes from considering
quantum nature effects that are negligible when working on the micrometer
scale (transistors with channel lengths longer than 80 nm).
The phenomenon is explained by a change of sign in the gradient of the
generalized quantum potential along the channel. The effect is only
observable at low drain voltages, where a slight initial internal channel
conductance (at no bias) unbalance causes the channel current to reverse
when the gate voltage sweeps from low to high values. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | Instituto Nacional de Astrofísica, Óptica y Electrónica | |
| dc.relation | citation:Huerta-Gonzalez O.V. | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
| dc.subject | info:eu-repo/classification/Modelado/Modelling | |
| dc.subject | info:eu-repo/classification/Modelos de dispositivos semiconductores/Semiconductor device models | |
| dc.subject | info:eu-repo/classification/Densidad actual/Current density | |
| dc.subject | info:eu-repo/classification/Simulación/Simulation | |
| dc.subject | info:eu-repo/classification/MOSFET/MOSFET | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.subject | info:eu-repo/classification/cti/22 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.title | Effect of drift and diffusion processes in the change of the current direction in a fet transistor | |
| dc.type | info:eu-repo/semantics/masterThesis | |
| dc.type | info:eu-repo/semantics/acceptedVersion | |
| dc.audience | students | |
| dc.audience | researchers | |
| dc.audience | generalPublic | |
