| dc.contributor | LIBRADO ARTURO SARMIENTO REYES | |
| dc.contributor | EDMUNDO ANTONIO GUTIERREZ DOMINGUEZ | |
| dc.creator | GABRIELA ALEJANDRA RODRIGUEZ RUIZ | |
| dc.date | 2015-02 | |
| dc.date.accessioned | 2023-07-25T16:20:56Z | |
| dc.date.available | 2023-07-25T16:20:56Z | |
| dc.identifier | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/125 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7805346 | |
| dc.description | The development of a 2D numerical simulation methodology that accounts for thermal and
magnetic effects on the gate tunneling current of nano-scaled MOSFETs, is the main goal
of this thesis. The Schrödinger-Poisson coupled equation system is modified to account for
the influence of a static magnetic field. The wavefunctions, which are the solution to the
Schrödinger-Poisson coupled equation system, and the energy, are then obtained as a function
of the magnetic field and temperature. Then, by considering open boundary conditions
with the Perfectly Matched Layer-PML method and using the Tsu-Esaki direct tunneling
model, the gate tunneling current under the influence of a magnetic field and temperature
is calculated. By modifying the source files of the commercial GTS Framework device simulation
tool to incorporate the new simulation methodology, the gate tunneling current is
computed as a function of electrical bias, temperature and magnetic field. By doing so, and
by sweeping the magnetic field from negative to positive values, it is found out that electrical
charges tunneling, through the gate oxide, from the semiconductor to the gate terminal, are
swept from left to right. Therefore, the proposed simulation methodology, accompanied with
experimental results, is a very valuable tool to investigate non-homogeneous space distributed
tunneling properties. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | Instituto Nacional de Astrofísica, Óptica y Electrónica | |
| dc.relation | citation:Rodriguez-Ruiz G.A. | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/4.0 | |
| dc.subject | info:eu-repo/classification/Modelos de dispositivos semiconductores/Semiconductor device models | |
| dc.subject | info:eu-repo/classification/Túnel magnético/Magnetic tunneling | |
| dc.subject | info:eu-repo/classification/Nanoelectrónica/Nanoelectronics | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.subject | info:eu-repo/classification/cti/22 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.subject | info:eu-repo/classification/cti/2203 | |
| dc.title | A 2D simulation methodology for thermo-magnetics effects on tunneling mechanisms of nano-scaled MOS devices | |
| dc.type | info:eu-repo/semantics/doctoralThesis | |
| dc.audience | generalPublic | |
