dc.creator | Alfredo Morales Sánchez | |
dc.creator | LILIANA PALACIOS HUERTA | |
dc.creator | MARIANO ACEVES MIJARES | |
dc.date | 2016-09 | |
dc.date.accessioned | 2023-07-21T15:32:30Z | |
dc.date.available | 2023-07-21T15:32:30Z | |
dc.identifier | http://cimav.repositorioinstitucional.mx/jspui/handle/1004/2563 | |
dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7728533 | |
dc.description | This work presents the electrical and
electroluminescent properties of light emitting capacitors (LECs)
using silicon rich oxide (SRO) and the effect of a thin silicon rich
nitride (SRN) film on it (SRN/SRO) as active layers. LECs were
fabricated using simple Metal–Insulator–Semiconductor (MIS)
structures with indium tin oxide (ITO) and aluminum as gate
and substrate electrodes, respectively. All devices exhibit a
resistance switching (RS) behavior from a high conduction state
(HCS) to a low conduction state (LCS), enhancing an intense
ultraviolet-blue (UV-B) EL. This RS behavior produces
structural changes in the active layer and probably in the ITO
contact. Seven narrow bands with half-peak width of 7±0.6 nm at
~250, 270, 285, 305, 325, 415 and 450 nm are clearly observed
once the low conduction state is reached. The red-near infrared
EL at HCS is similar to the PL spectra indicating the same
radiative process is involved. An increment of the EL band at
~590 nm in SRN/SRO is observed at both conduction states. This
band has been observed before and attributed transitions from
the minimum band conduction to K0 centers in SRN films. The
UV-B emission appears at lower electric field when the SRN/SRO
film is used as active layer. | |
dc.format | application/pdf | |
dc.language | eng | |
dc.rights | info:eu-repo/semantics/openAccess | |
dc.rights | http://creativecommons.org/licenses/by-nc/4.0 | |
dc.subject | info:eu-repo/classification/cti/1 | |
dc.subject | info:eu-repo/classification/cti/22 | |
dc.subject | info:eu-repo/classification/cti/2210 | |
dc.subject | info:eu-repo/classification/cti/221099 | |
dc.subject | info:eu-repo/classification/cti/221099 | |
dc.title | UV Electroluminescence from ITO/SRO/p-Si and ITO/SRN/SRO/p-Si Structures | |
dc.type | info:eu-repo/semantics/conferenceProceedings | |
dc.type | info:eu-repo/semantics/publishedVersion | |