dc.creatorManuel Rodríguez_perálvarez
dc.creatorAlfredo Morales Sánchez
dc.date2009-02
dc.date.accessioned2023-07-21T15:32:30Z
dc.date.available2023-07-21T15:32:30Z
dc.identifierhttp://cimav.repositorioinstitucional.mx/jspui/handle/1004/2562
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7728532
dc.descriptionEfficiency and reliability improvement of silicon nanocrystals in silicon oxide light-emitting devices is reported. The emission power efficiency is enhanced up to ~1 % by depositing a ~15-nm silicon nitride buffer onto the active layer. The presence of this additional layer reduces the leakage current through the structure, leading to an effective increase of the power efficiency without significant effects on the operation voltages. Furthermore, the silicon nitride cools down the electrons that reach the top electrode. Both effects lead to a device degradation reduction of up to 50 %.
dc.formatapplication/pdf
dc.languageeng
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc/4.0
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2210
dc.subjectinfo:eu-repo/classification/cti/221099
dc.subjectinfo:eu-repo/classification/cti/221099
dc.titleMNOS structure: towards efficient and reliable silicon nanocrystal-based LEDs
dc.typeinfo:eu-repo/semantics/conferenceProceedings
dc.typeinfo:eu-repo/semantics/publishedVersion


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