| dc.creator | Jesús Alarcón Salazar | |
| dc.creator | ROSA ELVIA LOPEZ ESTOPIER | |
| dc.creator | ENRIQUE QUIROGA GONZALEZ | |
| dc.creator | Alfredo Morales Sánchez | |
| dc.creator | Jorge Miguel Pedraza Chávez | |
| dc.creator | Ignacio Enrique Zaldívar Huerta | |
| dc.creator | MARIANO ACEVES MIJARES | |
| dc.date | 2016-03-10 | |
| dc.date.accessioned | 2023-07-21T15:32:10Z | |
| dc.date.available | 2023-07-21T15:32:10Z | |
| dc.identifier | http://cimav.repositorioinstitucional.mx/jspui/handle/1004/2431 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7728326 | |
| dc.description | Abstract
Off stoichiometric silicon oxide, also known as silicon-rich oxide (SRO), is a lightemitting
material that is compatible with silicon technology; therefore, it is a good
candidate to be used as a light source in all-silicon optoelectronic circuits. The SRO
obtained by low-pressure chemical vapor deposition (LPCVD) has shown the best
luminescent properties compared to other techniques. In spite of LPCVD being a
simple technique, it is not a simple task to obtain SRO with exact silicon excess in a
reliable and repetitive way. In this work, the expertise obtained in our group to obtain
SRO by LPCVD with precise variation is presented. Also, the characteristics of this
SRO obtained in our group are revised and discussed. It is demonstrated that LPCVD
is an excellent technique to obtain single layers and multilayers of nanometric single
layers with good characteristics. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc/4.0 | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.subject | info:eu-repo/classification/cti/1 | |
| dc.title | Silicon-Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition to Develop Silicon Light Sources | |
| dc.type | info:eu-repo/semantics/bookPart | |
| dc.type | info:eu-repo/semantics/publishedVersion | |
