dc.creatorANTONIO COYOPOL SOLIS
dc.creatorGODOFREDO GARCIA SALGADO
dc.creatorLILIANA PALACIOS HUERTA
dc.creatorAlfredo Morales Sánchez
dc.date2018-01-23
dc.date.accessioned2023-07-21T15:32:10Z
dc.date.available2023-07-21T15:32:10Z
dc.identifierhttp://cimav.repositorioinstitucional.mx/jspui/handle/1004/2429
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7728324
dc.descriptionAbstract Nowadays, study of silicon-based visible light-emitting devices has increased due to large-scale microelectronic integration. Since then different physical and chemical processes have been performed to convert bulk silicon (Si) into a light-emitting material. From discovery of Photoluminescence (PL) in porous Silicon by Canham, a new field of research was opened in optical properties of the Si nanocrystals (Si-NCs) embedded in a dielectric matrix, such as SRO (silicon-rich oxide) and SRN (silicon-rich nitride). In this respect, SRO films obtained by sputtering technique have proved to be an option for light-emitting capacitors (LECs). For the synthesis of SRO films, growth parameters should be considered; Si-excess, growth temperature and annealing temperature. Such parameters affect generation of radiative defects, distribution of Si-NCs and luminescent properties. In this chapter, we report synthesis, structural and luminescent properties of SRO monolayers and SRO/SiO2 multilayers (MLs) obtained by sputtering technique modifying Si-excess, thickness and thermal treatments.
dc.formatapplication/pdf
dc.languageeng
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc/4.0
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/25
dc.subjectinfo:eu-repo/classification/cti/2511
dc.subjectinfo:eu-repo/classification/cti/251104
dc.subjectinfo:eu-repo/classification/cti/251104
dc.titleSynthesis and Luminescent Properties of Silicon Nanocrystals
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion


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