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| info:eu-repo/semantics/article
AEMM490517HDFCJR02
UV Electroluminescence from ITO/SRO/p-Si and ITO/SRN/SRO/p-Si Structures
dc.creator | Alfredo Morales Sánchez | |
dc.creator | LILIANA PALACIOS HUERTA | |
dc.date | 2016 | |
dc.date.accessioned | 2023-07-21T15:32:10Z | |
dc.date.available | 2023-07-21T15:32:10Z | |
dc.identifier | http://cimav.repositorioinstitucional.mx/jspui/handle/1004/2428 | |
dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7728323 | |
dc.description | Abstract—This work presents the electrical and electroluminescent properties of light emitting capacitors (LECs) using silicon rich oxide (SRO) and the effect of a thin silicon rich nitride (SRN) film on it (SRN/SRO) as active layers. LECs were fabricated using simple Metal–Insulator–Semiconductor (MIS) structures with indium tin oxide (ITO) and aluminum as gate and substrate electrodes, respectively. All devices exhibit a resistance switching (RS) behavior from a high conduction state (HCS) to a low conduction state (LCS), enhancing an intense ultraviolet-blue (UV-B) EL. This RS behavior produces structural changes in the active layer and probably in the ITO contact. Seven narrow bands with half-peak width of 7±0.6 nm at ~250, 270, 285, 305, 325, 415 and 450 nm are clearly observed once the low conduction state is reached. The red-near infrared EL at HCS is similar to the PL spectra indicating the same radiative process is involved. An increment of the EL band at ~590 nm in SRN/SRO is observed at both conduction states. This band has been observed before and attributed transitions from the minimum band conduction to K0 centers in SRN films. The UV-B emission appears at lower electric field when the SRN/SRO film is used as active layer. | |
dc.format | application/pdf | |
dc.language | eng | |
dc.rights | info:eu-repo/semantics/openAccess | |
dc.rights | http://creativecommons.org/licenses/by-nc/4.0 | |
dc.subject | info:eu-repo/classification/cti/2 | |
dc.subject | info:eu-repo/classification/cti/23 | |
dc.subject | info:eu-repo/classification/cti/23 | |
dc.title | AEMM490517HDFCJR02 | |
dc.title | UV Electroluminescence from ITO/SRO/p-Si and ITO/SRN/SRO/p-Si Structures | |
dc.type | info:eu-repo/semantics/article | |
dc.type | info:eu-repo/semantics/publishedVersion |