dc.creator | MARIANO ACEVES MIJARES | |
dc.creator | ALFREDO ABELARDO GONZALEZ FERNANDEZ | |
dc.creator | KARIM MONFIL LEYVA | |
dc.creator | Alfredo Morales Sánchez | |
dc.date | 2010-06-30 | |
dc.date.accessioned | 2023-07-21T15:32:10Z | |
dc.date.available | 2023-07-21T15:32:10Z | |
dc.identifier | http://cimav.repositorioinstitucional.mx/jspui/handle/1004/2427 | |
dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7728322 | |
dc.description | ABSTRACT
Electroluminescent properties of thin silicon-rich oxide (SRO) films deposited by low pressure chemical vapor
deposition (LPCVD) were studied. The gas flow ratio Ro = N2O/SiH4 was changed to obtain different silicon
concentrations within the SRO films. After deposition, SRO films were thermally annealed at 1100ºC for 3h in N2
atmosphere in order to create silicon nanoparticles (Si-nps). Simple capacitive structures like Polysilicon/SRO/n-Si were
used for the study. These light emitting capacitors (LECs) show intense blue (∼466) and red EL (∼685) at room
temperature depending on the silicon excess within the SRO films. Electroluminescence in these LECs is obtained at
direct current (DC) at both forward and reverse bias conditions. Nevertheless, a stronger whole area EL is obtained when
devices are forwardly biased. | |
dc.format | application/pdf | |
dc.language | eng | |
dc.rights | info:eu-repo/semantics/openAccess | |
dc.rights | http://creativecommons.org/licenses/by-nc/4.0 | |
dc.subject | info:eu-repo/classification/cti/2 | |
dc.subject | info:eu-repo/classification/cti/23 | |
dc.subject | info:eu-repo/classification/cti/23 | |
dc.title | Blue and red electroluminescence of silicon-rich oxide light emitting capacitors | |
dc.type | info:eu-repo/semantics/article | |
dc.type | info:eu-repo/semantics/publishedVersion | |