dc.creatorAlfredo Morales Sánchez
dc.date2009
dc.date.accessioned2023-07-21T15:32:08Z
dc.date.available2023-07-21T15:32:08Z
dc.identifierhttp://cimav.repositorioinstitucional.mx/jspui/handle/1004/2426
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7728321
dc.descriptionAbstract—Efficiency and reliability improvement of silicon nanocrystals in silicon oxide light-emitting devices is reported. The emission power efficiency is enhanced up to ~1 % by depositing a ~15-nm silicon nitride buffer onto the active layer. The presence of this additional layer reduces the leakage current through the structure, leading to an effective increase of the power efficiency without significant effects on the operation voltages. Furthermore, the silicon nitride cools down the electrons that reach the top electrode. Both effects lead to a device degradation reduction of up to 50 %.
dc.formatapplication/pdf
dc.languageeng
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc/4.0
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/1
dc.titleMNOS structure: towards efficient and reliable silicon nanocrystal-based LEDs
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion


Este ítem pertenece a la siguiente institución