Impact of the structural characteristics on the performance of light emitting capacitors using nanometric SRO multilayers fabricated by LPCVD

dc.creatorAlfredo Morales Sánchez
dc.creatorJesús Alarcón Salazar
dc.creatorIgnacio Enrique Zaldívar Huerta
dc.creatorMARIANO ACEVES MIJARES
dc.date2016
dc.date.accessioned2023-07-21T15:32:03Z
dc.date.available2023-07-21T15:32:03Z
dc.identifierhttp://cimav.repositorioinstitucional.mx/jspui/handle/1004/2372
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7728273
dc.descriptionThis work relates the electrical, luminescent and morphological characteristics of two light emitting capacitors composed by multilayers of Silicon Rich Oxide (SRO). Multilayers alternate four conductive SRO layers (silicon excess of 12 or 14 at %) with three emitting SRO layers (silicon excess of 6 at %). Transmission electron microscopy reveals that multilayers present welldefined layers. Furthermore, it was found that layers with high silicon content induce growing of Si-nanocristals size on layers with lower silicon excess. After the first current versus voltage measurement, electroforming produces arrays of trajectories with high silicon content. These conductive paths allow that the LEC achieves higher currents with lower voltages, preserving the emitting characteristics of SRO layers. Consequently, the electroluminescence intensity is improved as well as the blue emission depending on the conductive SRO layers
dc.formatapplication/pdf
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nd/4.0
dc.subjectinfo:eu-repo/classification/cti/2
dc.subjectinfo:eu-repo/classification/cti/23
dc.subjectinfo:eu-repo/classification/cti/2307
dc.subjectinfo:eu-repo/classification/cti/221005
dc.subjectinfo:eu-repo/classification/cti/221005
dc.titleImpact of the structural characteristics on the performance of light emitting capacitors using nanometric SRO multilayers fabricated by LPCVD
dc.typeinfo:eu-repo/semantics/conferenceObject


Este ítem pertenece a la siguiente institución