dc.creatorEnrique Castro Camus
dc.date2014-09-27
dc.dateinfo:eu-repo/date/embargoEnd/2019-10-01
dc.date.accessioned2023-07-21T15:15:26Z
dc.date.available2023-07-21T15:15:26Z
dc.identifierhttp://cio.repositorioinstitucional.mx/jspui/handle/1002/922
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7725692
dc.descriptionMonte-Carlo simulations are used to show that the transit time in ∼ 100 nm gap photoconductive emitters of terahertz radiation is short enough to produce broad-bandwidth pulses. Furthermore, with these calculations we demonstrate that nanostructured contacts remove the need for low-temperature-grown or ion-implanted materials for broad-band terahertz devices.
dc.formatapplication/pdf
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/1
dc.titleTransit Time Enhanced Bandwidth in Nanostructured Terahertz Emitters
dc.typeinfo:eu-repo/semantics/article


Este ítem pertenece a la siguiente institución