Cuprous oxide layers grown on copper: effect of CO adsorption

dc.creatorGassa, Liliana Mabel
dc.creatorCastro Luna Berenguer, Ana María del Carmen
dc.creatorTorres Sánchez, Rosa María
dc.creatorZerbino, Jorge Omar
dc.date2004
dc.date2021-11-16T13:25:37Z
dc.date.accessioned2023-07-15T04:05:44Z
dc.date.available2023-07-15T04:05:44Z
dc.identifierhttp://sedici.unlp.edu.ar/handle/10915/128206
dc.identifierissn:1647-1571
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7468234
dc.descriptionThe semiconducting properties of anodic passive films formed on polycrystalline copper in aqueous borax solutions, pH 9.2, are studied using electrochemical impedance spectroscopy (EIS) and voltammetry. The semiconducting nature of the cuprous passive layer is analysed in the potential region near de rest potential as a function of the electrode potential and the presence of CO dissolved in the electrolyte. The oxide formation is explained as a sequence of Cu2O growth, cation adsorption, Cu(II), and dissolution steps similarly to previous reported investigations for the metal in CO free solutions. The different growth conditions change the defect or excess of cations accumulated in the outer side of the cuprous layer/electrolyte interface leading to different semiconducting properties.
dc.descriptionInstituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas
dc.descriptionCentro de Tecnología de Recursos Minerales y Cerámica
dc.formatapplication/pdf
dc.format81-91
dc.languageen
dc.rightshttp://creativecommons.org/licenses/by-nc-sa/4.0/
dc.rightsCreative Commons Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0)
dc.subjectQuímica
dc.subjectCopper oxide
dc.subjectCarbon monoxide
dc.subjectEIS
dc.subjectIsoelectric point
dc.subjectSemiconducting properties
dc.titleCuprous oxide layers grown on copper: effect of CO adsorption
dc.typeArticulo
dc.typeArticulo


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