dc.creator | Zubimendi, J. L. | |
dc.creator | Salvarezza, Roberto Carlos | |
dc.creator | Vázquez, L. | |
dc.creator | Arvia, Alejandro Jorge | |
dc.date | 1996 | |
dc.date | 2021-10-13T00:19:59Z | |
dc.date.accessioned | 2023-07-15T03:41:55Z | |
dc.date.available | 2023-07-15T03:41:55Z | |
dc.identifier | http://sedici.unlp.edu.ar/handle/10915/126521 | |
dc.identifier | https://pubs.acs.org/doi/pdf/10.1021/la940759m?rand=8l3p6czd | |
dc.identifier | issn:0743-7463 | |
dc.identifier | issn:1520-5827 | |
dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7466704 | |
dc.description | The early stages of sulfur deposit growth on highly oriented pyrolytic graphite (HOPG) caused by HS- electrooxidation in a neutral buffered solution have been investigated using electrochemical techniques and ex situ scanning tunneling microscopy (STM). In this system sulfur deposition has been observed at −0.80 V vs SCE, i.e. a potential more negative than the reversible potential for the HS-/S reaction. The charge density was equivalent to an average surface coverage by sulfur atoms θ ≅ 1/3 monolayer (ML). Ex situ atomic resolution STM images of the layer electrodeposited at −0.8 V show sulfur submonolayers and large uncovered HOPG domains. Sulfur electroadsorption layers appear as a diluted (√3×√3) surface phase with S atoms atop C atoms of the graphite hexagons and the S−S interatomic distance d(S−S) = 0.42 nm. Further addition of S atoms to a diluted sulfur phase resulted in the formation of sulfur trimers with three S atoms placed atop the three C atoms constituting the graphite hexagons. In this case d(S−S) = 0.24 nm. Neighbor trimers originate a filled hexagonal lattice. Ex situ STM images of overpotential deposited sulfur also show submonolayer sulfur domains with a second hexagonal (√3×√3)R30° sulfur lattice with d(S−S) = 0.42 nm. A further increase of θ produces either a new honeycomb lattice with d(S−S) = 0.24 nm or a rectangular lattice formed by rows of S atoms with d(S−S) = 0.21 nm and row separation d(S−S) = 0.37 nm. | |
dc.description | Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas | |
dc.format | application/pdf | |
dc.format | 2-11 | |
dc.language | es | |
dc.rights | http://creativecommons.org/licenses/by/4.0/ | |
dc.rights | Creative Commons Attribution 4.0 International (CC BY 4.0) | |
dc.subject | Ciencias Exactas | |
dc.subject | Química | |
dc.subject | highly oriented pyrolytic graphite | |
dc.subject | scanning tunneling microscopy | |
dc.subject | graphite single crystals | |
dc.title | Scanning Tunneling Microscopy Observation of Sulfur Electrodeposits on Graphite Single Crystals | |
dc.type | Articulo | |
dc.type | Articulo | |