dc.creatorVillafuerte, Manuel José
dc.creatorZamora, Darío Javier
dc.creatorBridoux, Germán
dc.creatorFerreyra, Jorge Mario
dc.creatorMeyer, Marcos
dc.creatorPérez, Silvia Inés
dc.date2017-02
dc.date2020-05-26T12:50:16Z
dc.date.accessioned2023-07-14T20:00:02Z
dc.date.available2023-07-14T20:00:02Z
dc.identifierhttp://sedici.unlp.edu.ar/handle/10915/96655
dc.identifierhttps://ri.conicet.gov.ar/11336/63981
dc.identifierhttps://aip.scitation.org/doi/10.1063/1.4975197
dc.identifierhttps://aip.scitation.org/doi/10.1063/1.4975197
dc.identifierissn:0021-8979
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7437517
dc.descriptionWe have studied the correlation between the photoconductivity and the dark resistivity of single ZnO microwires. We found that as-grown microwires with higher dark resistivities have higher photoconductivities. However, when the microwires are thermal treated in vacuum, this correlation is inverted. We have also analyzed the behavior of photoconductivity on protonated as-grown samples. We discuss the origin of these behaviors in terms of the interplay of oxygen and zinc vacancies and their complexes acting as recombination or trapping centers.
dc.descriptionInstituto de Física La Plata
dc.formatapplication/pdf
dc.languageen
dc.rightshttp://creativecommons.org/licenses/by-nc-sa/4.0/
dc.rightsCreative Commons Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0)
dc.subjectFísica
dc.subjectDark resistivity
dc.subjectPhotoconductivity
dc.subjectZnO microwires
dc.titleRole of defects and their complexes on the dependence of photoconductivity on dark resistivity of single ZnO microwires
dc.typeArticulo
dc.typeArticulo


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