Methodology for modeling and implementation of RF power amplifiers

dc.date.accessioned2019-01-29T22:19:51Z
dc.date.accessioned2023-05-30T23:27:35Z
dc.date.available2019-01-29T22:19:51Z
dc.date.available2023-05-30T23:27:35Z
dc.date.created2019-01-29T22:19:51Z
dc.date.issued2017
dc.identifierurn:isbn:9781509042876
dc.identifierhttp://repositorio.ucsp.edu.pe/handle/UCSP/15791
dc.identifierhttps://doi.org/10.1109/LAMC.2016.7851281
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/6477604
dc.description.abstractA new methodology for modeling and implementation of RF power amplifiers is shown. Starting from pulsed measurements, we demonstrated that we can predict small and large signal performances considering frequency dispersion effects, for different semiconductor technologies. © 2016 IEEE.
dc.languageeng
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relationhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85015828013&doi=10.1109%2fLAMC.2016.7851281&partnerID=40&md5=d30b4ea282a8664aa71c20a503e33b93
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.sourceRepositorio Institucional - UCSP
dc.sourceUniversidad Católica San Pablo
dc.sourceScopus
dc.subjectMicrowave devices
dc.subjectPower amplifiers
dc.subjectSemiconductor device manufacture
dc.subjectFrequency dispersion effect
dc.subjectLarge-signal performance
dc.subjectLevel model
dc.subjectMicrowave transistors
dc.subjectPulsed measurements
dc.subjectRF power amplifiers
dc.subjectSemiconductor technology
dc.subjectTrapping effects
dc.subjectRadio frequency amplifiers
dc.titleMethodology for modeling and implementation of RF power amplifiers
dc.typeinfo:eu-repo/semantics/conferenceObject


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