dc.contributorKrug, Margrit Reni
dc.creatorKondo, Elcio
dc.date.accessioned2017-05-25T12:10:45Z
dc.date.accessioned2022-09-22T19:25:14Z
dc.date.accessioned2023-03-13T20:53:49Z
dc.date.available2017-05-25T12:10:45Z
dc.date.available2022-09-22T19:25:14Z
dc.date.available2023-03-13T20:53:49Z
dc.date.created2017-05-25T12:10:45Z
dc.date.created2022-09-22T19:25:14Z
dc.date.issued2017-01-11
dc.identifierhttps://hdl.handle.net/20.500.12032/60670
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/6176496
dc.description.abstractNowadays several electronic equipment are using NAND Flash memories to store data. These memories are controlled by an integrated circuit with an memory controller embedded that internally has a system to ensure the integrity of the stored information, that are known as Error Correction Codes (ECC). The ECCs are codes that can detect and correct errors by redundant bits added to information. Usually the ECC codes are implemented on NAND Flash memory controller as a hardware block. On this text ECC codes used by industry, the Hamming code, BCH (Bose-Chaudhuri-Hocquenghem) and Reed-solomon codes were compared.Systemically compare between selected ECCs were done and selected two codes (BCH and Hamming), which were described in VHDL language and allowed to identify the best code with better economical advantage for NAND Flash memories.
dc.publisherUniversidade do Vale do Rio dos Sinos
dc.rightsopenAccess
dc.subjectECC
dc.subjectReed-Solomon
dc.titleEstudo comparativo de algoritmos de ECC aplicados à memória NAND Flash
dc.typeDissertação


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