Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs

dc.creatorALBERTON, S G
dc.creatorMEDINA, N H
dc.creatorADDED, N
dc.creatorAGUIAR, V A P
dc.creatorMENEGASSO, R
dc.creatorMACCHIONE, E L A
dc.creatorGUAZZELLI, Marcilei Aparecida
dc.date.issued2019-01-05
dc.identifierALBERTON, S. G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P; MENEGASSO, R.; MACCHIONE, E. L. A.; SILVEIRA, M. A. G. Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs. JOURNAL OF PHYSICS. CONFERENCE SERIES (PRINT), v. 1291, p. 012045, 2019.
dc.identifier1742-6588
dc.identifierhttps://repositorio.fei.edu.br/handle/FEI/3242
dc.description.abstractMOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs which may also be susceptible to destructive e ects. In this paper an experimental setup used to study SEEs in power MOSFETs at the S~ao Paulo 8UD Pelletron accelerator and computational simulations for SEE cross section calculations in low-voltage MOSFETs are presented.
dc.relationJOURNAL OF PHYSICS. CONFERENCE SERIES (PRINT)
dc.rightsCreative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY 3.0). Fonte: https://publishingsupport.iopscience.iop.org/licence-policy-for-articles-published-on-a-gold-open-access-basis/. Acesso em: 28 jun 2021
dc.rightsAcesso Aberto
dc.titleSingle-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
dc.typeArtigo


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