Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures

dc.creatorNovo C.
dc.creatorGiacomini R.
dc.creatorDoria R.
dc.creatorAfzalian A.
dc.creatorFlandre D.
dc.date.accessioned2019-08-19T23:45:24Z
dc.date.accessioned2022-09-09T15:40:03Z
dc.date.accessioned2023-03-13T19:13:34Z
dc.date.available2019-08-19T23:45:24Z
dc.date.available2022-09-09T15:40:03Z
dc.date.available2023-03-13T19:13:34Z
dc.date.created2019-08-19T23:45:24Z
dc.date.created2022-09-09T15:40:03Z
dc.date.issued2014
dc.identifierNOVO, C; Giacomini, R; DORIA, R; AFZALIAN, A; FLANDRE, D. Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures. Semiconductor Science and Technology (Print), v. 29, n. 7, p. 075008, 2014.
dc.identifier1361-6641
dc.identifierhttp://148.201.128.228:8080/xmlui/handle/20.500.12032/6536
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/6149833
dc.description.abstractThis work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN photodiodes. Measurements performed on fabricated devices show a fivefold improvement of the IDR when the devices are biased in accumulation mode and under high temperatures of operation, independently of the anode voltage. The obtained results show that the doping concentration of the intrinsic region has influence on the sensitivity of the diodes: the larger the doping concentration, the smaller the IDR. Furthermore, the photocurrent and dark current present lower values as the silicon film thickness is decreased, resulting in a further increase in the illuminated to dark ratio. © 2014 IOP Publishing Ltd.
dc.relationSemiconductor Science and Technology
dc.rightsAcesso Aberto
dc.titleIlluminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures
dc.typeArtigo


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