| dc.contributor | Universidade de São Paulo (USP) | |
| dc.contributor | Faculty of Medicine | |
| dc.contributor | Universidade Estadual Paulista (UNESP) | |
| dc.date.accessioned | 2022-05-01T15:46:13Z | |
| dc.date.accessioned | 2022-12-20T03:50:49Z | |
| dc.date.available | 2022-05-01T15:46:13Z | |
| dc.date.available | 2022-12-20T03:50:49Z | |
| dc.date.created | 2022-05-01T15:46:13Z | |
| dc.date.issued | 2022-03-01 | |
| dc.identifier | Electronics (Switzerland), v. 11, n. 6, 2022. | |
| dc.identifier | 2079-9292 | |
| dc.identifier | http://hdl.handle.net/11449/234286 | |
| dc.identifier | 10.3390/electronics11060939 | |
| dc.identifier | 2-s2.0-85126657571 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/5414387 | |
| dc.description.abstract | Deep-brain stimulation (DBS) is an emerging research topic aiming to improve the quality of life of patients with brain diseases, and a great deal of effort has been focused on the development of implantable devices. This paper presents a low-noise amplifier (LNA) for the acquisition of biopotentials on DBS. This electronic module was designed in a low-voltage/low-power CMOS process, targeting implantable applications. The measurement results showed a gain of 38.6 dB and a −3 dB bandwidth of 2.3 kHz. The measurements also showed a power consumption of 2.8 µW. Simulations showed an input-referred noise of 6.2 µVRMS . The LNA occupies a microdevice area of 122 µm × 283 µm, supporting its application in implanted systems. | |
| dc.language | eng | |
| dc.relation | Electronics (Switzerland) | |
| dc.source | Scopus | |
| dc.subject | CMOS | |
| dc.subject | Deep-brain stimulation (DBS) | |
| dc.subject | Implantable devices | |
| dc.subject | Low-noise amplifier | |
| dc.title | Low-Noise Amplifier for Deep-Brain Stimulation (DBS) | |
| dc.type | Artículos de revistas | |
