Growth evolution of AZO thin films deposited by magnetron sputtering at room temperature

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.contributorUniversidade de Sorocaba
dc.contributorUniversidade de São Paulo (USP)
dc.date.accessioned2022-05-01T08:15:09Z
dc.date.accessioned2022-12-20T03:39:44Z
dc.date.available2022-05-01T08:15:09Z
dc.date.available2022-12-20T03:39:44Z
dc.date.created2022-05-01T08:15:09Z
dc.date.issued2021-01-01
dc.identifierMaterials Research, v. 24, n. S1, 2021.
dc.identifier1980-5373
dc.identifier1516-1439
dc.identifierhttp://hdl.handle.net/11449/233369
dc.identifier10.1590/1980-5373-MR-2021-0052
dc.identifier2-s2.0-85112130662
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5413468
dc.description.abstractThin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two models of mobility scattering (ionized impurities and grain boundaries). The results suggest that the carrier density in the studied case is limited to below 15% owing to the low ionization efficiency caused by the formation of neutral impurities as homologous phases. While the spread in the mobility during the initial stages of film growth is strongly influenced by grain boundaries, in thicker films the limitation on ion efficiency becomes more significant.
dc.languageeng
dc.relationMaterials Research
dc.sourceScopus
dc.subjectAl thin films
dc.subjectMorphological properties
dc.subjectTCO
dc.subjectZnO
dc.titleGrowth evolution of AZO thin films deposited by magnetron sputtering at room temperature
dc.typeArtículos de revistas


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