dc.contributor | Pontificia Universidade Católica Do Rio De Janeiro | |
dc.contributor | Faculdade De Engenharia De Guaratinguetá | |
dc.contributor | Universidade de São Paulo (USP) | |
dc.date.accessioned | 2022-04-29T08:42:47Z | |
dc.date.accessioned | 2022-12-20T03:09:45Z | |
dc.date.available | 2022-04-29T08:42:47Z | |
dc.date.available | 2022-12-20T03:09:45Z | |
dc.date.created | 2022-04-29T08:42:47Z | |
dc.date.issued | 2002-11-01 | |
dc.identifier | Thin Solid Films, v. 419, n. 1-2, p. 46-53, 2002. | |
dc.identifier | 0040-6090 | |
dc.identifier | http://hdl.handle.net/11449/230926 | |
dc.identifier | 10.1016/S0040-6090(02)00756-3 | |
dc.identifier | 2-s2.0-0036849858 | |
dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/5411060 | |
dc.description.abstract | The deposition, structure and mechanical properties of hydrogenated amorphous carbon films grown in highly Ar-diluted CH4 atmospheres were investigated for a total pressure of 13 Pa. Films were investigated as a function of the self-bias voltage between -50 and -500 V for two extreme CH4 partial pressures, 2 and 100%. For the self-bias voltage that optimizes the diamond-like properties of the films, -350 V, we carried out an investigation as a function of the Ar partial pressure, which ranged from 0 to 99%. The deposition rate and the hydrogen content decreased with progressive Ar dilution. The density and the compressive internal stress are nearly constant. The hardness decreased for Ar-rich precursor atmospheres. The surface roughness was independent of the CH4 partial pressure. © 2002 Elsevier Science B.V. All rights reserved. | |
dc.language | eng | |
dc.relation | Thin Solid Films | |
dc.source | Scopus | |
dc.subject | Amorphous hydrogenated carbon | |
dc.subject | Methane | |
dc.subject | Noble gases | |
dc.subject | Plasma enhanced CVD | |
dc.title | Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar | |
dc.type | Artículos de revistas | |