dc.contributorPontificia Universidade Católica Do Rio De Janeiro
dc.contributorFaculdade De Engenharia De Guaratinguetá
dc.contributorUniversidade de São Paulo (USP)
dc.date.accessioned2022-04-29T08:42:47Z
dc.date.accessioned2022-12-20T03:09:45Z
dc.date.available2022-04-29T08:42:47Z
dc.date.available2022-12-20T03:09:45Z
dc.date.created2022-04-29T08:42:47Z
dc.date.issued2002-11-01
dc.identifierThin Solid Films, v. 419, n. 1-2, p. 46-53, 2002.
dc.identifier0040-6090
dc.identifierhttp://hdl.handle.net/11449/230926
dc.identifier10.1016/S0040-6090(02)00756-3
dc.identifier2-s2.0-0036849858
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5411060
dc.description.abstractThe deposition, structure and mechanical properties of hydrogenated amorphous carbon films grown in highly Ar-diluted CH4 atmospheres were investigated for a total pressure of 13 Pa. Films were investigated as a function of the self-bias voltage between -50 and -500 V for two extreme CH4 partial pressures, 2 and 100%. For the self-bias voltage that optimizes the diamond-like properties of the films, -350 V, we carried out an investigation as a function of the Ar partial pressure, which ranged from 0 to 99%. The deposition rate and the hydrogen content decreased with progressive Ar dilution. The density and the compressive internal stress are nearly constant. The hardness decreased for Ar-rich precursor atmospheres. The surface roughness was independent of the CH4 partial pressure. © 2002 Elsevier Science B.V. All rights reserved.
dc.languageeng
dc.relationThin Solid Films
dc.sourceScopus
dc.subjectAmorphous hydrogenated carbon
dc.subjectMethane
dc.subjectNoble gases
dc.subjectPlasma enhanced CVD
dc.titlePlasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar
dc.typeArtículos de revistas


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