Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2020-12-12T01:16:45Z
dc.date.accessioned2022-12-19T20:42:35Z
dc.date.available2020-12-12T01:16:45Z
dc.date.available2022-12-19T20:42:35Z
dc.date.created2020-12-12T01:16:45Z
dc.date.issued2019-04-01
dc.identifier2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019.
dc.identifierhttp://hdl.handle.net/11449/198580
dc.identifier10.1109/EUROSOI-ULIS45800.2019.9041908
dc.identifier2-s2.0-85080744450
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5379214
dc.description.abstractIn this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.
dc.languageeng
dc.relation2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
dc.sourceScopus
dc.subjectSilicon-On-Insulator (SOI)
dc.subjectTunnel Field Effect Transistor (TFET)
dc.subjectUltra-Thin Body and Buried oxide (UTBB)
dc.titleProposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
dc.typeActas de congresos


Este ítem pertenece a la siguiente institución