Processing of BiFeO3 thin films to control their dielectric response

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorFed Inst Educ Sci & Technol Sao Paulo
dc.contributorUniv Rio Verde UniRV
dc.date.accessioned2020-12-10T20:00:45Z
dc.date.accessioned2022-12-19T20:22:52Z
dc.date.available2020-12-10T20:00:45Z
dc.date.available2022-12-19T20:22:52Z
dc.date.created2020-12-10T20:00:45Z
dc.date.issued2020-05-18
dc.identifierFerroelectrics. Abingdon: Taylor & Francis Ltd, v. 560, n. 1, p. 61-69, 2020.
dc.identifier0015-0193
dc.identifierhttp://hdl.handle.net/11449/196929
dc.identifier10.1080/00150193.2020.1722884
dc.identifierWOS:000536970900010
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5377566
dc.description.abstractBiFeO3 (BFO) thin films were studied to control their oxygen-related processing parameters in order to obtain specific electrical characteristics in terms of conductivity and dielectric relaxation. BFO thin films prepared with Fe and Bi excesses and post-annealed in oxygen atmosphere showed higher electrical conductivity and lower conduction activation energies than single phase ones. Distinct parameters indicated different conduction mechanisms in the films, associated with the first ionization of oxygen vacancies in BFO films with Fe and Bi excesses and the second one in single phase films. Higher conductive films show lower relaxation times compared to single phase ones.
dc.languageeng
dc.publisherTaylor & Francis Ltd
dc.relationFerroelectrics
dc.sourceWeb of Science
dc.subjectConductivity
dc.subjectdielectric relaxation
dc.subjectbismuth ferrite
dc.subjectthin films
dc.titleProcessing of BiFeO3 thin films to control their dielectric response
dc.typeArtículos de revistas


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