Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2020-12-10T17:33:07Z
dc.date.accessioned2022-12-19T20:03:55Z
dc.date.available2020-12-10T17:33:07Z
dc.date.available2022-12-19T20:03:55Z
dc.date.created2020-12-10T17:33:07Z
dc.date.issued2019-01-01
dc.identifier2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.
dc.identifierhttp://hdl.handle.net/11449/195392
dc.identifierWOS:000534490900049
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5376029
dc.description.abstractIn this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (t(Bio)). It is shown that the sensitivity of the Bio-TFET improves as the drain doping concentration increases up to 1x10(20) cm(-3). The t(Bio) influence over the sensitivity increases for thicker biomaterials up to 40 nm and present lower increment for higher t(Bio). The highest sensitivity value obtained in this work was for a drain doping concentration of 1x10(20) cm(-3) and for biomaterial thickness equal or higher than 40 nm.
dc.languageeng
dc.publisherIeee
dc.relation2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019)
dc.sourceWeb of Science
dc.subjectBiosensor
dc.subjectTFET
dc.subjectBiomaterial thickness
dc.subjectDrain doping
dc.subjectUnderlap
dc.subjectSensitivity
dc.subjectPermittivity
dc.titleImpact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
dc.typeActas de congresos


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