Analysis and measurement of the non-linear refractive index of SiOxNy using pedestal waveguides

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorIPEN CNEN SP
dc.contributorSao Paulo State Technol Coll FATEC
dc.date.accessioned2020-12-10T17:33:06Z
dc.date.accessioned2022-12-19T20:03:54Z
dc.date.available2020-12-10T17:33:06Z
dc.date.available2022-12-19T20:03:54Z
dc.date.created2020-12-10T17:33:06Z
dc.date.issued2019-01-01
dc.identifier2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 5 p., 2019.
dc.identifierhttp://hdl.handle.net/11449/195391
dc.identifierWOS:000534490900048
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5376028
dc.description.abstractIn this work, the non-linear refractive index (n(2)) of silicon oxynitride (SiOxNy) is determined, obtaining a value for this material of n(2) = 2.11x10(-19) m(2)/W. The results demonstrate that this material has interesting properties for the development of non-linear optical devices. The paper presents in detail the waveguide fabrication process using the pedestal technique, which allows using different materials since it does not require etching to define the sidewalls of the waveguides. We show the results of the measurement of the n(2) employing the non-linear optical phenomena of Self-Phase Modulation (SPM).
dc.languageeng
dc.publisherIeee
dc.relation2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019)
dc.sourceWeb of Science
dc.subjectoptical devices
dc.subjectnon-linear photonics
dc.subjectsilicon oxynitride
dc.subjectself-phase modulation
dc.subjectnon-linear refractive index
dc.subjectintegrated photonics
dc.subjectmicroelectronics
dc.titleAnalysis and measurement of the non-linear refractive index of SiOxNy using pedestal waveguides
dc.typeActas de congresos


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